SP8J3FU6TB
MOSFET 2P-CH 30V 3.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8J3FU6TB is a 2 P-channel MOSFET array designed for surface mount applications. This device features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain current (Id) capability of 3.5A at 25°C. The SP8J3FU6TB offers a low On-Resistance (Rds On) of 90mOhm maximum at 3.5A and 10V, along with a Logic Level Gate feature. Key parameters include a maximum Gate Charge (Qg) of 5.5nC at 5V and an input capacitance (Ciss) of 490pF maximum at 10V. The device operates within a temperature range of -55°C to 150°C (TJ) and dissipates a maximum power of 2W. The package is an 8-SOP, supplied on tape and reel (TR). This component is suitable for applications in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 490pF @ 10V |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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