SP8J1FU6TB
MOSFET 2P-CH 30V 5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SP8J1FU6TB is a dual P-channel MOSFET array designed for efficient power switching. This 8-SOP package component features a Drain-to-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. The device exhibits a low on-resistance of 42mOhm at 5A and 10V, characteristic of its MOSFET technology. With a logic level gate, it ensures compatibility with lower voltage control signals. Key parameters include a maximum gate charge (Qg) of 16nC at 5V and an input capacitance (Ciss) of 1400pF at 10V. The surface mountable component is supplied on tape and reel and has a maximum power dissipation of 2W. This MOSFET array is utilized across various industries including automotive, industrial automation, and consumer electronics for applications requiring precise voltage and current control.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | - |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 1400pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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