SM6K2T110
MOSFET 2N-CH 60V 0.2A SMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Rohm Semiconductor SM6K2T110 is a high-performance MOSFET array featuring two N-channel transistors in a complementary configuration. This component offers a 60V drain-source voltage (Vdss) and a continuous drain current (Id) of 200mA per channel at 25°C. With a maximum power dissipation of 300mW and a low on-resistance (Rds On) of 2.4 Ohm at 200mA and 10V, it is suitable for efficient switching applications. The device supports logic-level gate drive, with a gate threshold voltage (Vgs(th)) of 2.5V at 1mA. Key electrical specifications include a gate charge (Qg) of 4.4nC max at 10V and an input capacitance (Ciss) of 15pF max at 10V. The SM6K2T110 is housed in a compact SMT6 (SC-74, SOT-457) surface-mount package, supplied on tape and reel. This MOSFET array finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 300mW |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 15pF @ 10V |
| Rds On (Max) @ Id, Vgs | 2.4Ohm @ 200mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4.4nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | SMT6 |