SH8M70TB1
MOSFET N/P-CH 250V 3A/2.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor MOSFET N/P-CH array, part number SH8M70TB1, offers a 250V drain-to-source voltage capability. This device features a complementary N-channel and P-channel configuration within an 8-SOP package, suitable for surface mounting. The continuous drain current is rated at 3A for the N-channel and 2.5A for the P-channel at 25°C. Key parameters include a maximum power dissipation of 2W, a typical input capacitance (Ciss) of 180pF at 25V, and a gate charge (Qg) of 5.2nC at 10V. The on-resistance (Rds On) is 1.63 Ohms at 1.5A and 10V for the N-channel. Operating temperature range extends to 150°C (TJ). This component finds application in power management circuits within the automotive and industrial sectors. Packaging is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 250V |
| Current - Continuous Drain (Id) @ 25°C | 3A, 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 180pF @ 25V |
| Rds On (Max) @ Id, Vgs | 1.63Ohm @ 1.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | 8-SOP |
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