SH8M51GZETB
MOSFET N/P-CH 100V 3A/2.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8M51GZETB is a MOSFET array featuring complementary N-channel and P-channel configurations. This device offers a drain-source voltage (Vdss) of 100V, with continuous drain current (Id) ratings of 3A for the N-channel and 2.5A for the P-channel, both specified at 25°C ambient temperature. The device exhibits a maximum on-resistance (Rds On) of 170mOhm at 3A, 10V for the N-channel and 290mOhm at 2.5A, 10V for the P-channel. Key electrical characteristics include input capacitance (Ciss) of 610pF (N-ch) and 1550pF (P-ch) at 25V, and gate charge (Qg) of 8.5nC (N-ch) and 12.5nC (P-ch) at 5V. The SH8M51GZETB is housed in an 8-SOP (8-SOIC) surface mount package, designed for a maximum power dissipation of 1.4W at 25°C ambient. The threshold voltage (Vgs(th)) is rated at a maximum of 2.5V at 1mA. This component is suitable for applications in power management and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta), 2.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V, 1550pF @ 25V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3A, 10V, 290mOhm @ 2.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V, 12.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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