SH8M41GZETB
MOSFET N/P-CH 80V 3.4A/2.6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8M41GZETB is an 80V N-channel and P-channel MOSFET array in an 8-SOP surface mount package. This component offers a continuous drain current of 3.4A for the N-channel and 2.6A for the P-channel at 25°C. Key features include a logic level gate, requiring only 4V drive, and a maximum power dissipation of 2W. The specified on-resistance (Rds On) is 130mOhm at 3.4A and 10V Vgs. With a gate charge (Qg) of 9.2nC at 5V and input capacitance (Ciss) of 600pF at 10V, the SH8M41GZETB is suitable for applications in automotive and industrial power control systems. It operates within an ambient temperature range of -55°C to 150°C (TJ) and is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A, 2.6A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 5V |
| FET Feature | Logic Level Gate, 4V Drive |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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