SH8M24GZETB
MOSFET N/P-CH 45V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8M24GZETB is a MOSFET array featuring N and P-channel configurations. This component offers a Drain to Source Voltage (Vdss) of 45V and a continuous drain current (Id) of 6A at 25°C (Ta). The device is supplied in an 8-SOP package for surface mounting and supports a maximum power dissipation of 1.4W (Ta). Key electrical characteristics include an input capacitance (Ciss) of up to 1700pF and a gate charge (Qg) of up to 18.2nC. The on-resistance (Rds On) is specified as 46mOhm at 4.5A, 10V for the N-channel and 63mOhm at 3.5A, 10V for the P-channel. This component is suitable for applications in automotive and industrial sectors. The operating junction temperature range is -55°C to 150°C. The device is provided on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V, 1700pF @ 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V, 63mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V, 18.2nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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