SH8M14TB1
MOSFET N/P-CH 30V 9A/7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8M14TB1, a MOSFET array, features N and P-channel configurations with a 30V Vdss rating. This surface mount component delivers continuous drain current capabilities of 9A for the N-channel and 7A for the P-channel at 25°C. The SH8M14TB1 is designed with a logic level gate and exhibits a typical Rds On of 21mOhm at 9A and 10V. Key specifications include a maximum power dissipation of 2W, a gate charge of 8.5nC at 5V, and input capacitance of 630pF at 10V. Operating temperature range is up to 150°C (TJ). The device is supplied in an 8-SOP package, presented on tape and reel. This component is commonly utilized in automotive and industrial applications requiring efficient power switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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