SH8M13GZETB
MOSFET N/P-CH 30V 6A/7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's SH8M13GZETB is a surface-mount MOSFET array featuring both N-channel and P-channel configurations. This component offers a Drain to Source Voltage (Vdss) of 30V, with continuous drain currents rated at 6A for one channel and 7A for the other at 25°C. The array is packaged in an 8-SOIC (0.154", 3.90mm Width) and supports a maximum power dissipation of 2W. Key electrical specifications include a typical Gate Charge (Qg) of 18nC at 5V and an input capacitance (Ciss) of 1200pF at 10V. The On-Resistance (Rds On) is 29mOhm maximum at 7A and 10V. Operating temperature reaches up to 150°C (TJ). This device finds application in power management and switching circuits across various industrial and consumer electronics sectors. The SH8M13GZETB is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | - |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A, 7A |
| Input Capacitance (Ciss) (Max) @ Vds | 1200pF @ 10V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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