SH8M12TB1
MOSFET N/P-CH 30V 5A/4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8M12TB1 is a MOSFET array featuring N-channel and P-channel configurations, designed for efficient power switching applications. This component operates with a drain-source voltage of 30V and offers continuous drain currents of 5A for the N-channel and 4.5A for the P-channel, respectively. The device boasts a low on-resistance (Rds On) of 42mOhm at 5A and 10V, coupled with a low gate charge (Qg) of 4nC at 5V, contributing to reduced switching losses. Its logic-level gate feature simplifies drive requirements. Packaged in an 8-SOP (8-SOIC) surface mount configuration, it can dissipate up to 2W, with an operating temperature range up to 150°C. The SH8M12TB1 is utilized in industries such as automotive, industrial automation, and consumer electronics for power management and control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A, 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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