SH8M11TB1
MOSFET N/P-CH 30V 3.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8M11TB1 combines N-channel and P-channel MOSFETs in a compact 8-SOP package, designed for efficient power switching applications. This surface-mount device features a drain-to-source voltage (Vdss) of 30V and supports a continuous drain current (Id) of 3.5A at 25°C. The MOSFET array offers a low on-resistance (Rds On) of 98mOhm maximum at 3.5A and 10V, coupled with a logic-level gate for wider compatibility. Key parameters include a gate charge (Qg) of 1.9nC maximum at 5V and input capacitance (Ciss) of 85pF maximum at 10V. With a maximum power dissipation of 2W and an operating temperature range up to 150°C, the SH8M11TB1 is suitable for use in automotive and industrial power management systems. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 85pF @ 10V |
| Rds On (Max) @ Id, Vgs | 98mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.9nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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