SH8KA2GZETB
MOSFET 2N-CH 30V 8A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor's SH8KA2GZETB is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a 30V drain-source voltage (Vdss) and supports a continuous drain current (Id) of 8A at 25°C. The low on-resistance of 28mOhm (max) at 8A, 10V, coupled with a maximum power dissipation of 2.8W, ensures efficient operation. Key electrical characteristics include a gate charge (Qg) of 8nC (max) at 10V and input capacitance (Ciss) of 330pF (max) at 15V. The device operates reliably up to 150°C (TJ) and is housed in an 8-SOP package suitable for surface mounting, supplied in tape and reel. This MOSFET array finds utility in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | - |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 8A |
| Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 15V |
| Rds On (Max) @ Id, Vgs | 28mOhm @ 8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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