SH8K52GZETB
MOSFET 2N-CH 100V 3A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K52GZETB is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 100V and a continuous drain current (Id) capability of 3A at 25°C with a maximum power dissipation of 1.4W. The array offers a low on-resistance (Rds On) of 170mOhm when driven at 3A with a 10V gate-source voltage (Vgs). Key parameters include a gate charge (Qg) of 8.5nC at 5V and input capacitance (Ciss) of 610pF at 25V. Manufactured using advanced Metal Oxide technology, the SH8K52GZETB is housed in a compact 8-SOIC (0.154", 3.90mm Width) surface mount package, supplied on tape and reel. It is suitable for use in industrial automation, power management, and consumer electronics. The device operates at a maximum junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 610pF @ 25V |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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