SH8K51GZETB
MOSFET 2N-CH 35V 4A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8K51GZETB is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 35V and a continuous drain current (Id) of 4A at 25°C. The Rds On is specified at a maximum of 58mOhm at 4A and 10V. Key parameters include a gate charge (Qg) of 5.6nC maximum at 5V and an input capacitance (Ciss) of 300pF maximum at 10V. The device operates at a maximum junction temperature of 150°C and has a maximum power dissipation of 1.4W. Packaged in an 8-SOP (8-SOIC) and supplied on tape and reel (TR), this MOSFET array finds application in power management and switching circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 35V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.8V @ 1mA |
| Supplier Device Package | 8-SOP |
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