SH8K4TB1
MOSFET 2N-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K4TB1 is a dual N-channel MOSFET array in an 8-SOP package. This device offers a 30V drain-to-source voltage and a continuous drain current of 9A at 25°C. Featuring logic level gate drive, it presents a maximum Rds(On) of 17mOhm at 9A and 10V. Key electrical parameters include a maximum gate charge (Qg) of 21nC at 5V and a maximum input capacitance (Ciss) of 1190pF at 10V. The component supports a maximum power dissipation of 2W and operates at junction temperatures up to 150°C. This MOSFET array is suitable for applications in automotive and industrial power management. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 1190pF @ 10V |
| Rds On (Max) @ Id, Vgs | 17mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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