SH8K41GZETB
MOSFET 2N-CH 80V 3.4A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's SH8K41GZETB is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 80V and a continuous Drain current (Id) of 3.4A per channel at 25°C. The device offers a low Rds On of 130mOhm maximum at 3.4A and 10V Vgs, with a specified Gate Charge (Qg) of 6.6nC maximum at 5V. Its Input Capacitance (Ciss) is 600pF maximum at 10V. The MOSFET array operates with a Logic Level Gate and has a Vgs(th) of 2.5V maximum at 1mA. Packaged in an 8-SOIC (0.154", 3.90mm Width) and supplied on Tape & Reel (TR), the SH8K41GZETB is suitable for power management and general-purpose switching applications in automotive and industrial sectors. It has a maximum power dissipation of 1.4W and an operating junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W |
| Drain to Source Voltage (Vdss) | 80V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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