SH8K3TB1
MOSFET 2N-CH 30V 7A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K3TB1 is a dual N-channel MOSFET array in an 8-SOP package, designed for efficient power switching. This component features a drain-source voltage (Vdss) rating of 30V and a continuous drain current (Id) capability of 7A at 25°C. The low on-resistance of 24mOhm at 7A and 10V (Vgs) minimizes conduction losses, while the 2W power dissipation (Ta) in the 8-SOIC package ensures thermal management. Key electrical parameters include a gate charge (Qg) of 11.8nC (max) at 5V and input capacitance (Ciss) of 600pF (max) at 10V. The SH8K3TB1 is suitable for applications in automotive, industrial, and consumer electronics power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 600pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 11.8nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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