SH8K37GZETB
MOSFET 2N-CH 60V 5.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K37GZETB is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 60V and a continuous drain current (Id) of 5.5A at 25°C. The device exhibits a low on-resistance (Rds On) of 46mOhm at 5.5A and 10V, with a maximum power dissipation of 1.4W. Key parameters include a gate charge (Qg) of 9.7nC and input capacitance (Ciss) of 500pF. The SH8K37GZETB operates at a junction temperature up to 150°C and is supplied in an 8-SOP package, presented on tape and reel. This MOSFET array is suitable for applications in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 30V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 5.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.7nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.7V @ 100µA |
| Supplier Device Package | 8-SOP |
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