SH8K32TB1
MOSFET 2N-CH 60V 4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's SH8K32TB1 is a dual N-channel MOSFET array housed in an 8-SOP package. This device features a 60V drain-source voltage rating and a continuous drain current capability of 4.5A at 25°C. The MOSFETs are designed with a logic level gate, facilitating lower gate drive voltages. Key electrical parameters include a maximum Rds(On) of 65mOhm at 4.5A and 10V Vgs, a gate charge (Qg) of 10nC (max) at 5V, and an input capacitance (Ciss) of 500pF (max) at 10V. The component supports a maximum power dissipation of 2W and operates across an extended temperature range up to 150°C (TJ). This MOSFET array is suitable for applications in automotive and industrial power management systems, leveraging its surface mount configuration for efficient board integration. The device is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 500pF @ 10V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.0x6.0) |
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