SH8K2TB1
MOSFET 2N-CH 30V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K2TB1 is a dual N-channel MOSFET array designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 6A at 25°C. The device offers a low on-resistance (Rds On) of 30mOhm at 6A and 10V, contributing to reduced power loss. Its logic level gate facilitates easier driving from low-voltage microcontrollers. Key parameters include a gate charge (Qg) of 10.1nC at 5V and an input capacitance (Ciss) of 520pF at 10V. The SH8K2TB1 is packaged in an 8-SOP (5.0x6.0) surface-mount format, suitable for space-constrained designs, and rated for a maximum power dissipation of 2W. Operating temperature range is up to 150°C. Typical applications include power management, battery protection, and motor control circuits in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Gull Wing |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 10.1nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP (5.0x6.0) |
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