SH8K26GZ0TB1
MOSFET 2N-CH 40V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8K26GZ0TB1 is a dual N-channel MOSFET array designed for surface mounting in an 8-SOP package, supplied on tape and reel. This component features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 6A (Ta). The on-resistance (Rds On) is a maximum of 38mOhm at 6A and 10V. With a gate charge (Qg) of 2.9nC (max) at 5V and input capacitance (Ciss) of 280pF (max) at 10V, it is suitable for high-efficiency switching applications. The device operates at a maximum junction temperature of 150°C and can dissipate up to 2W (Ta) in its specified package. This MOSFET array finds application in power management, automotive systems, and industrial control electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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