SH8K26GZ0TB
MOSFET 2N-CH 40V 6A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
The Rohm Semiconductor SH8K26GZ0TB is a dual N-channel MOSFET array designed for high-performance applications. This component features a Drain to Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 6A at 25°C. The Rds On is rated at a maximum of 38mOhm when Id is 6A and Vgs is 10V. With a gate charge (Qg) of 2.9nC (max) at 5V and input capacitance (Ciss) of 280pF (max) at 10V, it offers efficient switching characteristics. The MOSFET array has a maximum power dissipation of 2W (Ta) and operates within a junction temperature range of 150°C (TJ). Packaged in an 8-SOP (8-SOIC) surface mount configuration, it is supplied on tape and reel. This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 280pF @ 10V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 6A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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