SH8K25GZ0TB1
MOSFET 2N-CH 40V 5.2A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8K25GZ0TB1 is a 2 N-channel MOSFET array housed in an 8-SOP package. This device features a drain-to-source voltage (Vdss) of 40V and a continuous drain current (Id) of 5.2A at 25°C. The on-resistance (Rds On) is a maximum of 85mOhm at 5.2A and 10V. Key parameters include a gate charge (Qg) of 1.7nC (max) at 5V and input capacitance (Ciss) of 100pF (max) at 10V. The maximum power dissipation (Ta) is 1.4W. This component is suitable for surface mount applications and operates at a junction temperature up to 150°C. Its typical applications span industrial power control and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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