SH8K25GZ0TB
MOSFET 2N-CH 40V 5.2A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's SH8K25GZ0TB is a dual N-channel MOSFET array designed for surface mount applications. This component features a Drain-to-Source Voltage (Vdss) of 40V and a continuous drain current (Id) of 5.2A at 25°C. The array offers a low on-resistance (Rds On) of 85mOhm at 5.2A and 10V, with a maximum power dissipation of 2W. Key electrical parameters include a gate charge (Qg) of 1.7nC at 5V and input capacitance (Ciss) of 100pF at 10V. The MOSFET threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. Packaged in an 8-SOP (8-SOIC) format, the SH8K25GZ0TB is supplied on tape and reel. This device is suitable for applications in power management, industrial automation, and consumer electronics. The operating junction temperature range is up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 100pF @ 10V |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 5.2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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