SH8K22TB1
MOSFET 2N-CH 45V 4.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor SH8K22TB1 is a dual N-channel power MOSFET array designed for high-efficiency switching applications. This component features a drain-source voltage (Vdss) of 45V and a continuous drain current (Id) of 4.5A at 25°C. The low on-resistance (Rds On) of 46mOhm at 4.5A and 10V gate-source voltage (Vgs) minimizes conduction losses. With a gate charge (Qg) of 9.6nC max at 5V and input capacitance (Ciss) of 550pF max at 10V, it supports efficient switching frequencies. The device is housed in an 8-SOP package, suitable for surface mounting, and operates up to 150°C. Its thermal performance is further defined by a maximum power dissipation of 1.4W. This MOSFET array is commonly utilized in power supply circuits, motor control, and automotive electronics. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 45V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 550pF @ 10V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 9.6nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
QS6K21FRATR
MOSFET 2N-CH 45V 1A TSMT6
US6M2GTR
MOSFET N/P-CH 30V/20V 1.5A TUMT6
TT8J13TCR
MOSFET 2P-CH 12V 2.5A 8TSST
