SH8K1TB1
MOSFET 2N-CH 30V 5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor SH8K1TB1 is a dual N-channel MOSFET array designed for power switching applications. This component features a Drain-Source Voltage (Vdss) of 30V and a continuous Drain Current (Id) of 5A at 25°C. The array is built with MOSFET technology, offering a low on-resistance of 51mOhm maximum at 5A and 10V. It operates with a Logic Level Gate, indicated by a Vgs(th) of 2.5V maximum at 1mA, and requires a Gate Charge (Qg) of 5.5nC maximum at 5V. Input capacitance (Ciss) is 230pF maximum at 10V. The SH8K1TB1 is packaged in an 8-SOP (8-SOIC) surface mount configuration, supporting a maximum power dissipation of 2W and an operating temperature up to 150°C (TJ). This device is commonly utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V |
| Rds On (Max) @ Id, Vgs | 51mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 5.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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