SH8K15TB1
MOSFET 2N-CH 30V 9A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor's SH8K15TB1 is a dual N-channel MOSFET array designed for demanding applications. This component features a 30V drain-to-source voltage rating and can handle a continuous drain current of 9A at 25°C. The device is built with MOSFET technology, offering a low on-resistance of 21mOhm maximum at 9A and 10V Vgs. Its logic level gate feature simplifies drive requirements, with a gate threshold voltage of 2.5V maximum at 1mA.
The SH8K15TB1 boasts a maximum power dissipation of 2W and a maximum gate charge of 8.5nC at 5V. Input capacitance (Ciss) is rated at 630pF maximum at 10V. This MOSFET array is supplied in an 8-SOP package, suitable for surface mounting, and is delivered on tape and reel. Operating temperature range extends up to 150°C (TJ). This component is commonly utilized in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 9A |
| Input Capacitance (Ciss) (Max) @ Vds | 630pF @ 10V |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
Request a Quote
Clients Also Buy
SP8M10FRATB
MOSFET N/P-CH 30V 7A/4.5A 8SOP
BSM600D12P3G001
SIC 2N-CH 1200V 600A MODULE
QH8K26TR
MOSFET 2N-CH 40V 7A TSMT8
