SH8K10SGZETB
MOSFET 2N-CH 30V 7A/8.5A 8SOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor SH8K10SGZETB is a dual N-channel MOSFET array designed for surface mount applications. This component features a drain-source voltage (Vdss) of 30V and continuous drain current (Id) ratings of 7A and 8.5A at 25°C ambient temperature, respectively. The device offers low on-resistance (Rds On) of 24mOhm at 7A, 10V and 19.6mOhm at 8.5A, 10V. Key electrical characteristics include a gate charge (Qg) of 16.8nC and 17.8nC at 5V, and input capacitance (Ciss) of 660pF and 830pF at 10V, respectively. The maximum power dissipation is 1.4W (Ta). Packaged in an 8-SOP (8-SOIC), this MOSFET array is suitable for use in automotive and industrial control applications. The operating junction temperature range is -55°C to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SOIC (0.154"", 3.90mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.4W (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta), 8.5A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V, 830pF @ 10V |
| Rds On (Max) @ Id, Vgs | 24mOhm @ 7A, 10V, 19.6mOhm @ 8.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16.8nC @ 5V, 17.8nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-SOP |
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