QS8M12TCR
MOSFET N/P-CH 30V 4A TSMT8Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor QS8M12TCR is a MOSFET array featuring both N-channel and P-channel configurations within a single TSMT8 surface mount package. This device supports a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 4A at 25°C. Optimized for logic-level gate drive, it exhibits a low Rds On of 42mOhm maximum at 4A and 10V. Key parameters include a gate charge (Qg) of 3.4nC at 5V and input capacitance (Ciss) of 250pF at 10V. The QS8M12TCR is rated for a maximum power dissipation of 1.5W and operates across a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in automotive and industrial applications requiring efficient power switching and control. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.4nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT8 |
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