QS8J1TR
MOSFET 2P-CH 12V 4.5A TSMT8Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor QS8J1TR is a dual P-channel MOSFET array designed for demanding applications. Featuring a 12V Vds rating and capable of handling 4.5A continuous drain current at 25°C, this device offers a low Rds(on) of 29mOhm at 4.5A, 4.5V. The logic level gate sensitivity, with a Vgs(th) of 1V at 1mA, ensures compatibility with a wide range of control signals. With a maximum power dissipation of 1.5W and an operating junction temperature of 150°C, the QS8J1TR is suitable for power management and switching tasks in automotive and industrial electronics. It is supplied in a TSMT8 package, utilizing surface mount technology for efficient board integration, presented in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.5W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 2450pF @ 6V |
| Rds On (Max) @ Id, Vgs | 29mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 1mA |
| Supplier Device Package | TSMT8 |
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