QH8M22TCR
MOSFET N/P-CH 40V 4.5A/2A TSMT8Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor's QH8M22TCR is a MOSFET array featuring complementary N-channel and P-channel transistors within an 8-SMD, Flat Leads (TSMT8) package. This device boasts a Drain to Source Voltage (Vdss) of 40V, with continuous drain current capabilities of 4.5A for the N-channel and 2A for the P-channel, both specified at 25°C ambient. The N-channel MOSFET exhibits a low on-resistance of 46mOhm at 4.5A and 10V Vgs, while the P-channel offers 190mOhm at 2A and 10V Vgs. Key parameters include gate charge of 2.6nC (N-ch) and 9.5nC (P-ch) at 10V Vgs, and input capacitance of 193pF (N-ch) and 450pF (P-ch) at 20V Vds. With a maximum power dissipation of 1.1W (Ta) and an operating junction temperature up to 150°C, this MOSFET array is suitable for applications in automotive and industrial power management. The QH8M22TCR is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A (Ta), 2A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 193pF @ 20V, 450pF @ 20V |
| Rds On (Max) @ Id, Vgs | 46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.6nC @ 10V, 9.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 10µA, 3V @ 1mA |
| Supplier Device Package | TSMT8 |
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