QH8K26TR
MOSFET 2N-CH 40V 7A TSMT8Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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The Rohm Semiconductor QH8K26TR is a dual N-channel MOSFET array designed for demanding applications. This component features a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 7A at 25°C. The QH8K26TR offers a low on-resistance of 38mOhm at 7A and 10V, with a gate charge (Qg) of 2.9nC at 5V. Input capacitance (Ciss) is rated at 275pF maximum at 20V. This device operates at a maximum power of 1.1W and can withstand junction temperatures up to 150°C. The MOSFET array is housed in an 8-SMD, Flat Leads TSMT8 package and is supplied on tape and reel. Applications include power management and switching circuits in automotive and industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W (Ta) |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | 275pF @ 20V |
| Rds On (Max) @ Id, Vgs | 38mOhm @ 7A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 2.9nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | TSMT8 |
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