MP6M12TCR
MOSFET N/P-CH 30V 5A MPT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor's MP6M12TCR is a MOSFET array featuring both N-channel and P-channel transistors within a 6-SMD, Flat Leads package. This device offers a Drain to Source Voltage (Vdss) of 30V and a continuous drain current (Id) of 5A at 25°C. Key specifications include a low Rds On of 42mOhm at 5A and 10V, a gate charge (Qg) of 4nC maximum at 5V, and input capacitance (Ciss) of 250pF maximum at 10V. The component operates with a logic level gate and has a maximum power dissipation of 2W. Rohm Semiconductor's MP6M12TCR is suitable for applications in power management, automotive electronics, and consumer electronics requiring efficient switching and compact integration. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 5A |
| Input Capacitance (Ciss) (Max) @ Vds | 250pF @ 10V |
| Rds On (Max) @ Id, Vgs | 42mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | MPT6 |
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