HP8S36TB
MOSFET 2N-CH 30V 27A/80A 8HSOPManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Rohm Semiconductor HP8S36TB is an 8-HSOP packaged MOSFET array featuring two N-Channel transistors. This component is rated for a 30V drain-source voltage (Vdss) and offers a continuous drain current (Id) of 27A and 80A, with a maximum power dissipation of 29W. Key electrical characteristics include a low Rds On of 2.4mOhm at 32A and 10V, a gate charge (Qg) of 47nC at 4.5V, and an input capacitance (Ciss) of 6100pF at 15V. The threshold voltage (Vgs(th)) is a maximum of 2.5V at 1mA. Designed for surface mounting, the HP8S36TB operates within a temperature range of -55°C to 150°C. This device is suitable for applications in power management and automotive systems. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 21 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerTDFN |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | - |
| Power - Max | 29W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 27A, 80A |
| Input Capacitance (Ciss) (Max) @ Vds | 6100pF @ 15V |
| Rds On (Max) @ Id, Vgs | 2.4mOhm @ 32A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 47nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Supplier Device Package | 8-HSOP |
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