EM6M1T2R
MOSFET N/P-CH 30V/20V EMT6Manufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Rohm Semiconductor EM6M1T2R is a MOSFET array featuring complementary N-channel and P-channel transistors in a single EMT6 package. This device offers a 30V drain-source voltage rating for the N-channel FET and 20V for the P-channel FET. Continuous drain current capabilities are 100mA for the N-channel and 200mA for the P-channel, with a maximum power dissipation of 150mW. The array is designed with logic-level gate drive, exhibiting a typical gate charge of 0.9nC at 4.5V and input capacitance of 13pF at 5V. On-resistance is specified at 8 Ohms maximum for the N-channel at 10mA and 4V. This surface-mount component is supplied on tape and reel and operates within a temperature range of -55°C to 150°C. Applications include automotive and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 150mW |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Current - Continuous Drain (Id) @ 25°C | 100mA, 200mA |
| Input Capacitance (Ciss) (Max) @ Vds | 13pF @ 5V |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 10mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 0.9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | - |
| Supplier Device Package | EMT6 |
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