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BSM450D12P4G102

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BSM450D12P4G102

SIC 2N-CH 1200V 447A MODULE

Manufacturer: Rohm Semiconductor

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Mosfet Array 1200V (1.2kV) 447A (Tc) 1.45kW (Tc) Chassis Mount Module

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BoxDatasheet:
Technical Details:
PackagingBox
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel
Operating Temperature175°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max1.45kW (Tc)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C447A (Tc)
Input Capacitance (Ciss) (Max) @ Vds44000pF @ 10V
Rds On (Max) @ Id, Vgs-
Gate Charge (Qg) (Max) @ Vgs-
FET Feature-
Vgs(th) (Max) @ Id4.8V @ 218.4mA
Supplier Device PackageModule

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