BSM300D12P4G101
SIC 2N-CH 1200V 291A MODULEManufacturer: Rohm Semiconductor
Categories: FET, MOSFET Arrays
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Mosfet Array 1200V (1.2kV) 291A (Tc) 925W (Tc) Chassis Mount Module
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: BoxDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Box |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel |
| Operating Temperature | 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 925W (Tc) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 291A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 30000pF @ 10V |
| Rds On (Max) @ Id, Vgs | - |
| Gate Charge (Qg) (Max) @ Vgs | - |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4.8V @ 145.6mA |
| Supplier Device Package | Module |
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