SCS220KE2C
DIODE ARR SIC SCHOT 1200V TO247Manufacturer: Rohm Semiconductor
Categories: Diode Arrays
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Rohm Semiconductor SCS220KE2C is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 1200 V and an average rectified current of 10 A per diode. Its performance characteristics include a forward voltage (Vf) of 1.6 V at 10 A and a low reverse leakage current of 200 µA at 1200 V. The SiC technology provides zero reverse recovery time, enabling high-speed switching applications. This diode array is suitable for use in power supply, industrial motor control, and electric vehicle charging systems. The operating junction temperature reaches a maximum of 175°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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