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SCS220AE2C

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SCS220AE2C

DIODE ARR SIC SCHOT 650V TO247

Manufacturer: Rohm Semiconductor

Categories: Diode Arrays

Quality Control: Learn More

Rohm Semiconductor's SCS220AE2C is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 650V. Each diode within the array is rated for 10A average rectified current, with a low forward voltage drop of 1.55V at 10A. The device exhibits a minimal reverse leakage current of 200 µA at 600V and boasts a negligible reverse recovery time, contributing to high-efficiency operation. With a maximum junction operating temperature of 175°C, this diode array is suitable for demanding applications in power factor correction, electric vehicle charging, and industrial power supplies.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode)10A (DC)
Supplier Device PackageTO-247
Operating Temperature - Junction175°C (Max)
Voltage - DC Reverse (Vr) (Max)650 V
Voltage - Forward (Vf) (Max) @ If1.55 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 600 V

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