SCS120KE2C
DIODE ARR SIC SCHOT 1200V TO247Manufacturer: Rohm Semiconductor
Categories: Diode Arrays
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Rohm Semiconductor's SCS120KE2C is a Silicon Carbide (SiC) Schottky diode array featuring a common cathode configuration. This component is rated for a continuous reverse voltage of 1200 V and offers a forward voltage drop of 1.7 V at a forward current of 10 A. The average rectified current per diode is 10 A (DC). Designed for high-temperature operation with a maximum junction temperature of 175°C, it exhibits a reverse leakage current of 200 µA at its maximum reverse voltage. The SCS120KE2C boasts zero reverse recovery time, making it suitable for high-frequency switching applications. Packaged in a TO-247-3 through-hole configuration, this diode array is commonly employed in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 10A (DC) |
| Supplier Device Package | TO-247 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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