RFN6BM2DTL
DIODE ARRAY GP 200V 6A TO252Manufacturer: Rohm Semiconductor
Categories: Diode Arrays
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Rohm Semiconductor RFN6BM2DTL is a dual diode array featuring a common cathode configuration. This component offers a maximum DC reverse voltage (Vr) of 200V and a forward voltage (Vf) of 980mV at 3A. Each diode within the array is rated for an average rectified forward current (Io) of 6A, with a low reverse leakage current of 10 µA at 200V. The device boasts a fast reverse recovery time (trr) of 25 ns, classifying it as a fast recovery diode. It is housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package, supplied on tape and reel. The RFN6BM2DTL is suitable for applications in power supply rectification, switching power supplies, and general-purpose high-frequency rectification circuits, commonly found in automotive and industrial electronics. The maximum junction operating temperature is 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 25 ns |
| Technology | Standard |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 6A |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | 150°C |
| Voltage - DC Reverse (Vr) (Max) | 200 V |
| Voltage - Forward (Vf) (Max) @ If | 980 mV @ 3 A |
| Current - Reverse Leakage @ Vr | 10 µA @ 200 V |
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