IMP11T110
DIODE ARRAY GP 80V 100MA SMT6Manufacturer: Rohm Semiconductor
Categories: Diode Arrays
Quality Control: Learn More
Rohm Semiconductor IMP11T110 is a high-speed diode array featuring two pairs of common anode configurations. This component offers a reverse voltage rating of 80 V and a forward current handling capability of 100 mA per diode, with a forward voltage drop of 1.2 V at 100 mA. The device exhibits a low reverse leakage current of 100 nA at 70 V and a fast reverse recovery time of 4 ns. Manufactured with standard technology, it is suitable for small signal applications up to 200 mA. The IMP11T110 is housed in an SC-74, SOT-457 (SMT6) package, designed for surface mounting and supplied on tape and reel. Its operating junction temperature can reach up to 150°C. This diode array is utilized in various electronics applications, including consumer electronics and telecommunications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-74, SOT-457 |
| Mounting Type | Surface Mount |
| Speed | Small Signal =< 200mA (Io), Any Speed |
| Reverse Recovery Time (trr) | 4 ns |
| Technology | Standard |
| Diode Configuration | 2 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 100mA |
| Supplier Device Package | SMT6 |
| Operating Temperature - Junction | 150°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 1.2 V @ 100 mA |
| Current - Reverse Leakage @ Vr | 100 nA @ 70 V |
Request a Quote
Clients Also Buy
BAS40-06HYT116
DIODE ARR SCHOTT 40V 120MA SOT23
RB088BM-30FHTL
DIODE ARR SCHOTT 30V 10A TO252
RB228NS-40TL
DIODE ARRAY SCHOTT 40V 30A LPDS
