VT6Z2T2R
TRANS NPN/PNP 50V 0.1A 6VMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
The Rohm Semiconductor VT6Z2T2R is a bipolar transistor array featuring one NPN and one PNP transistor within a single VMT6 surface mount package. This component is rated for a collector-emitter breakdown voltage of 50V and can handle a continuous collector current up to 100mA. With a transition frequency of 350MHz, it is suitable for a wide range of high-frequency applications. The device exhibits a minimum DC current gain (hFE) of 120 at 1mA collector current and 6V collector-emitter voltage. Saturation voltage (Vce) is specified at a maximum of 300mV at 5mA base current and 50mA collector current. The maximum power dissipation is 150mW, and it operates within an extended temperature range up to 150°C. This array is commonly utilized in automotive and industrial control systems. The VT6Z2T2R is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | VMT6 |
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