VT6X12T2R
NPN+NPN GENERAL PURPOSE AMPLIFICManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
Quality Control: Learn More
Rohm Semiconductor's VT6X12T2R is a bipolar transistor array featuring two NPN configurations. This component provides a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. With a transition frequency of 350MHz and a power dissipation of 150mW, it is suitable for general-purpose amplification applications. The minimum DC current gain (hFE) is 120 at 1mA and 6V. Saturation voltage (Vce) is a maximum of 300mV at 5mA base current and 50mA collector current. The device operates at temperatures up to 150°C (TJ) and is housed in a 6-SMD, Flat Leads package (VMT6), supplied in tape and reel. This component finds utility in various industrial and consumer electronics sectors requiring compact, high-performance transistor solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | VMT6 |
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