VT6T1T2R
PNP+PNP GENERAL PURPOSE AMPLIFICManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor's VT6T1T2R is a dual PNP bipolar junction transistor array designed for general-purpose amplification. This surface mount component, housed in a VMT6 package, offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 200mA. With a transition frequency of 350MHz and a minimum DC current gain of 120 at 1mA and 6V, it provides efficient amplification characteristics. The device has a maximum power dissipation of 150mW and an operating junction temperature of 150°C. Key parameters include a collector cutoff current of 100nA (ICBO) and a Vce saturation of 300mV at 10mA, 100mA. This component is suitable for applications in industrial and consumer electronics. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | VMT6 |
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