VT6T12T2R
TRANS GP BJT PNP 50V 0.1A 6-PINManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor's VT6T12T2R is a bipolar transistor array featuring two PNP transistors. This device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of up to 100mA. With a transition frequency of 300MHz, it is suitable for various signal amplification and switching applications. The DC current gain (hFE) is a minimum of 120 at 1mA collector current and 6V collector-emitter voltage. The Vce saturation voltage is specified at a maximum of 400mV at 5mA base current and 50mA collector current. The transistor array is packaged in a 6-pin VMT6 surface-mount configuration, designed for automated assembly. Its maximum power dissipation is 150mW, and it operates reliably across a temperature range up to 150°C. This component finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | VMT6 |
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