VT6T11T2R
PNP+PNP GENERAL PURPOSE AMPLIFICManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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The Rohm Semiconductor VT6T11T2R is a dual PNP bipolar junction transistor array designed for general-purpose amplification. This surface-mount component, packaged in a VMT6 (6-SMD, Flat Leads) on Tape & Reel (TR), offers a collector-emitter breakdown voltage of 20V and a maximum collector current of 200mA. Featuring a transition frequency of 350MHz and a power dissipation of 150mW, it exhibits a minimum DC current gain (hFE) of 120 at 1mA, 2V. The cutoff current (ICBO) is a maximum of 100nA, and the Vce saturation is a maximum of 300mV at 10mA, 100mA. This device finds application in industrial, automotive, and consumer electronics sectors for signal amplification and switching functions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Transistor Type | 2 PNP (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 200mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 2V |
| Frequency - Transition | 350MHz |
| Supplier Device Package | VMT6 |
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