UMZ8NTR
TRANS NPN/PNP 50V/12V UMT6Manufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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The Rohm Semiconductor UMZ8NTR is a bipolar transistor array featuring one NPN and one PNP transistor within a 6-pin UMT6 package. This surface mount device offers a 50V collector-emitter breakdown voltage for the NPN and 12V for the PNP. It supports collector currents up to 150mA for the NPN and 500mA for the PNP, with transition frequencies of 180MHz and 260MHz, respectively. Minimum DC current gain (hFE) is specified at 120 @ 1mA, 6V for the NPN and 270 @ 10mA, 2V for the PNP. Collector cutoff current is a maximum of 100nA (ICBO). Saturation voltages are 400mV @ 5mA, 50mA (NPN) and 250mV @ 10mA, 200mA (PNP). Maximum power dissipation is 150mW, with an operating junction temperature up to 150°C. This component is suitable for applications in consumer electronics and industrial control systems. The UMZ8NTR is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 150mA, 500mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V, 12V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA / 250mV @ 10mA, 200mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V / 270 @ 10mA, 2V |
| Frequency - Transition | 180MHz, 260MHz |
| Supplier Device Package | UMT6 |
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