UMX4NTR
TRANS 2NPN 20V 0.05A 6UMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor's UMX4NTR is a bipolar junction transistor (BJT) array featuring two NPN transistors. This device offers a collector-emitter breakdown voltage (Vce) of 20V and a continuous collector current (Ic) of up to 50mA. With a transition frequency (Ft) of 1.5GHz, it is suitable for high-frequency applications. The UMX4NTR is housed in a compact UMT6 package, a 6-lead surface mount configuration. Key electrical characteristics include a minimum DC current gain (hFE) of 56 at 10mA, 10V, and a maximum collector-emitter saturation voltage (Vce(sat)) of 500mV at 4mA, 20mA. The maximum power dissipation is 150mW, and it can operate up to a junction temperature of 150°C. This component is commonly utilized in consumer electronics and industrial automation. The UMX4NTR is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Mounting Type | Surface Mount |
| Transistor Type | 2 NPN (Dual) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 150mW |
| Current - Collector (Ic) (Max) | 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 20V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 20mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 10V |
| Frequency - Transition | 1.5GHz |
| Supplier Device Package | UMT6 |
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