QSZ1TR
TRANS NPN/PNP 15V 2A 5TSMTManufacturer: Rohm Semiconductor
Categories: Bipolar Transistor Arrays
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Rohm Semiconductor QSZ1TR is a bipolar transistor array featuring complementary NPN and PNP configurations in an emitter-coupled arrangement. This device offers a collector emitter breakdown voltage (Vce(max)) of 15V and a continuous collector current (Ic) of up to 2A. With a transition frequency (fT) of 360MHz, it is suitable for applications requiring high-speed switching. The DC current gain (hFE) is a minimum of 270 at 200mA and 2V. The transistor array has a maximum power dissipation of 500mW and a saturation voltage (Vce(sat)) of 180mV at 50mA and 1A. The device operates at temperatures up to 150°C (TJ) and is supplied in a TSMT5 package for surface mounting. Typical applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-23-5 Thin, TSOT-23-5 |
| Mounting Type | Surface Mount |
| Transistor Type | 1 NPN, 1 PNP (Emitter Coupled) |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 500mW |
| Current - Collector (Ic) (Max) | 2A |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Vce Saturation (Max) @ Ib, Ic | 180mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Frequency - Transition | 360MHz |
| Supplier Device Package | TSMT5 |
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